High Impact Research: Composition metrology and correlative microscopy of wide bandgap semiconductors with APT
In the last decade, atom probe tomography (APT) has emerged as a valuable tool in the study of III-N semiconductors. In optoelectronics, it has provided insights into the nanostructure of light emitting diodes (LEDs), laser diodes and microwires. In nano-electronics, it has allowed insights into doping and alloying effects in transistors.
Coupled with other microscopy techniques (i.e., TEM, PL, CL) and theoretical modeling, the availability of three-dimensional compositional information of nitride heterostructures based on the APT data has had (and will continue to have) a profound impact on the design and development of devices.
Now available on demand:
https://zoom.us/rec/share/fuh9PadgvfZFCPpv8jyJtzvdwqaRJa-S-zoG39NURHj5GQP3r5QgDWbIsWJxyP3C.mF3m7p8kw7uIbevx
Passcode:
WebinarFeb1!
Speakers:
Adeline Grenier (CEA)
Ionna Dimkou (CEA)
Lorenzo Rigutti (University of Rouen)
Enrico Di Russo (University of Padova)